Tag: parametric gain GaAs AlGaAs superlattice

New open access article is published in the journal Nanomaterials (MDPI) by Vladislovas Čižas, Natalia Alexeeva, Kirill N. Alekseev and Gintaras Valušis. Theoretical study dives into the physical mechanisms of high-frequency gain in a doped semiconductor superlattice

The findings of the research contributes to the advancement of new miniature GHz–THz frequency generators, amplifiers, and dividers operating at room temperature.

The research was partially funded by the Marius Jakulis Jason Foundation and the Research Council of Lithuania (No 01.2.2-LMT-K-718-03-0096).

The paper can be reached through this DOI: . https://doi.org/10.3390/nano13131993

New study is published in the journal “Physical Review Letters” from American Physical Society in the field of parametric generation of EM oscillations in GHz-THz frequency range. The work reports on the first observation of the dissipative parametric generation in a subcritically doped GaAs/AlGaAs superlattice (SL) subjected to a DC bias and a microwave pump. It enforces excitation of slow electrostatic waves in the SL that provide a significant enhancement of the gain coefficient.

The findings foresee the development of a miniature solid-state parametric generators of GHz-THz frequencies operating at room temperature.

DOI: 10.1103/PhysRevLett.128.236802