Laser Micromachining Technology for AlGaN/GaN HEMTs and Schottky barrier diodes

Recent study “Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside” was published by S. Indrašiūnas et al. in “Micromachines” Journal from MDPI publisher. In the thorough study laser ablation process was optimized and used to dice transparent wafers with AlGaN/GaN heterostructures with various electronic devices. The work was supported from the Research Council of Lithuania (Lietuvos mokslo taryba) through the “T-HP” Project (Grant No. DOTSUT-184) funded by the European Regional Development Fund according to the supported activity “Research Projects Implemented by World-class Researcher Groups” under the Measure No. 01.2.2-LMT-K-718-03-0096. The work can be reached through DOI: https://doi.org/10.3390/mi11121131

Recent publication in Micromachines journal

Recent open access paper was published on 20th of December in the journal Micromachines (MDPI) entitled “AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics”.  The work got joint financial support from the Research Council of Lithuania (grant No. S-LL-19-1), the National Science Centre of Poland (grant no. 2017/27/L/ST7/03283), and the Foundation for Polish Science with European Union under the European Regional Development Fund (Nos. MAB/2018/9). Congratulations to the authors on the publication.

DOI: https://doi.org/10.3390/mi11121131